SiC MOSFET

第4代SiC MOSFET

特點

1.改進短路耐受時間，實現業界超低導通電阻

在第4代碳化矽MOSFET中，透過進一步改進羅姆自有的雙溝槽結構，成功地改進主驅逆變器等要求的短路耐受時間為前提，使導通電阻比以往產品降低約40%。實現了碳化矽MOSFET產品的業界超低導通電阻。

2.通過大幅降低寄生電容，實現更低開關損耗

第4代碳化矽MOSFET通過大幅降低柵漏電容（Cgd），成功使開關損耗比以往產品降低約50％。

3.支援15V柵源驅動電壓，使應用產品的設計更容易

在MOSFET中，需要在器件ON時向電晶體的柵極施加一定量的電壓。除了到第3代碳化矽MOSFET為止所支援的18V柵源驅動電壓（Vgs）外，第4代碳化矽MOSFET還支援更容易處理的15V柵源驅動電壓，可與IGBT一起用來設計驅動電路（柵極驅動電路）。

應用範例：主驅逆變器

有助於包括車載逆變器和各種開關電源在內，各種應用產品實現顯著的小型化和更低功耗，比如在用於車載主驅逆變器時，與使用IGBT時相比，效率可以得到顯著提升，主要體現在逆變器的高扭矩和低轉速範圍，從而可使電耗減少6%（按國際標準“WLTC燃料消耗量測試”計算）。

第4代SiC MOSFET 支援資訊

評估板

4th Generation SiC MOSFET Half Bridge Evaluation Board
P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001

P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001是一款可評估採用TO-247N/TO-247-4L封裝的第4代SiC MOSFET的評估板。對於所搭載的SiC MOSFET，可以選擇並購買所需導通阻值的元件來進行評估。該評估板中配有閘極驅動器和週邊電路，可有效減少設計和評估工時。

• User Guide
• Product Specification

Evaluation Board HB2637L-EVK-301

The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.

• User Guide

EVK Simulatrion (ROHM Solution Simulator)
・P05CT4018KR-EVK-001 Double Pulse Test
・P04SCT4018KE-EVK-001 Double Pulse Test
・HB2637L-EVK-301 Double Pulse Test

我們對評估板進行了建模作業，並在線上模擬器中為第4代SiC MOSFET準備了雙脈衝測試環境。 可以透過模擬評估工作電壓、柵極驅動電路、緩衝電路常數等引起的開關波形，並有助於減少實機評估的工時，以及用於對寄生電感的效果評估等。（需要註冊MyROHM）。

• [4th Gen SiC] D-001. P05SCT4018KR-EVK-001 Double Pulse Test
• [4th Gen SiC] D-002. P04SCT4018KE-EVK-001 Double Pulse Test
• [4th Gen SiC] D-003. HB2637L-EVK-301_SCT4036KW7 Double Pulse Test

Documents

White Paper

• 4 Steps for Successful Thermal Designing of Power Devices

Application Note

• 4th Gen SiC MOSFETs Discrete Package:Characteristics and Precautions for Circuit Design Application Note
• 5kW Inverter Circuit Using 4th Generation SiC MOSFETs
• Application Benefits of Using 4th Generation SiC MOSFETs

Design Model

Part Number	Drain-source Voltage[V]	Drain-source On-state Resistance (Typ.(mΩ)	Package	SPICE Model	Thermal Model	PLECS Model	PCB Library
SCT4045DE	750	45	TO-247N	Available	Available	Available
SCT4026DE		26		Available	Available	Available
SCT4013DE		13		Available	Available	Available
SCT4062KE	1200	62		Available	Available	Available
SCT4036KE		36		Available	Available	Available
SCT4018KE		18		Available	Available	Available	-
SCT4045DR	750	45	TO-247-4L	Available	Available	Available
SCT4026DR		26		Available	Available	Available
SCT4013DR		13		Available	Available	Available
SCT4062KR	1200	62		Available	Available	Available
SCT4036KR		36		Available	Available	Available
SCT4018KR		18		Available	Available	Available
SCT4045DW7	750	45	TO-263-7L	Available	Available	Available
SCT4026DW7		26		Available	Available	Available
SCT4013DW7		13		Available	Available	Available
SCT4062KW7	1200	62		Available	Available	Available
SCT4036KW7		36		Available	Available	Available
SCT4018KW7		18		Available	Available	Available

Simulations (Login Required)

• [4th Gen SiC] D-001. P05SCT4018KR-EVK-001 Double Pulse Test
• [4th Gen SiC] D-002. P04SCT4018KE-EVK-001 Double Pulse Test
• [4th Gen SiC] D-003. HB2637L-EVK-301_SCT4036KW7 Double Pulse Test

TO-247N (3pin)

• [4th Gen SiC] A-011b. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016b. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

TO-247-4L (4pin)

• [4th Gen SiC] A-011a. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016a. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

SiC MOSFET 支援資訊

評估板

Category		SiC Product	Image	Part No.	User Guide	Purchase Board
SiC-MOS	Evaluation Board	SCT4XXX series Trench(4th Generation) TO-247-N		NEW P04SCT4018KE-EVK-001	User Guide Product Specification	Online Distributors
		SCT4XXX series Trench(4th Generation) TO-247-4L		NEW P05SCT4018KR-EVK-001		Online Distributors
		SCT3XXX series Trench(3rd Generation) TO-247-4L		P02SCT3040KR-EVK-001	User Guide Product Specification	Online Distributors

Documents

White Paper

• 4 Steps for Successful Thermal Designing of Power Devices
• Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
• The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
• LEADRIVE: Design, Test And System Evaluation Of Silicon Carbide Power Modules And Motor Control Units
• Solving The Challenges Of Driving SiC MOSFETs With New Packaging Developments

Application Note

• 4th Gen SiC MOSFETs Discrete Package:Characteristics and Precautions for Circuit Design Application Note
• 5kW Inverter Circuit Using 4th Generation SiC MOSFETs
• Application Benefits of Using 4th Generation SiC MOSFETs
• 5kW High-Efficiency Fan-less Inverter
• 800V Three-Phase Output LLC DC/DC Resonant Converter
• Improvement Of Switching Loss By Driver Source
• Basics and Design Guidelines for Gate Drive Circuits

Technical Articles

Schematic Design ＆ Verification

• Oscillation countermeasures for MOSFETs in parallel
• Application Note for SiC Power Devices and Modules
• Calculating Power Loss from Measured Waveforms
• Calculation of Power Dissipation in Switching Circuit
• Method for Monitoring Switching Waveform
• Precautions during gate-source voltage measurement for SiC MOSFET
• Snubber circuit design methods for SiC MOSFET
• Gate-source voltage behaviour in a bridge configuration
• Gate-Source Voltage Surge Suppression Methods
• Importance of Probe Calibration When Measuring Power: Deskew
• Impedance Characteristics of Bypass Capacitor
• Basics and Design Guidelines for Gate Drive Circuits

Thermal Design

• What Is Thermal Design
• Basics of Thermal Resistance and Heat Dissipation
• Method for Calculating Junction Temperature from Transient Thermal Resistance Data
• Notes for Temperature Measurement Using Thermocouples
• Two-Resistor Model for Thermal Simulation
• Notes for Temperature Measurement Using Forward Voltage of PN Junction
• What is a Thermal Model? (SiC Power Device)
• How to Use Thermal Models
• Measurement Method and Usage of Thermal Resistance RthJC
• Precautions When Measuring the Rear of the Package with a Thermocouple

Models ＆　Tools

Simulations (Login Required)

TO-247N (3pin)

• [4th Gen SiC] A-011b. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016b. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

TO-247-4L (4pin)

• [4th Gen SiC] A-011a. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016a. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

• [4th Gen SiC] D-001. P05SCT4018KR-EVK-001 Double Pulse Test
• [4th Gen SiC] D-002. P04SCT4018KE-EVK-001 Double Pulse Test
• [4th Gen SiC] D-003. HB2637L-EVK-301_SCT4036KW7 Double Pulse Test
• A-001. Boost PFC V_IN=200V, I_IN=2.5A BCM
• A-002. Boost PFC V_IN=200V, I_IN=2.5A CCM
• A-003. Boost PFC V_IN=200V, I_IN=2.5A CCM Synchronous FETs
• A-004. Boost PFC V_IN=200V, I_IN=2.5A DCM
• A-005. Boost PFC V_IN=200V, I_IN=2.5A DCM Synchronous FETs
• A-006. Interleaved PFC V_IN=200V, I_IN=2.5A CCM
• A-008. Interleaved PFC V_IN=200V, I_IN=2.5A DCM
• A-012. Diode-Bridgeless PFC V_IN=200V, I_IN=2.5A BCM
• B-011. 3-Phase 3-level NPC-T Inverter P_OUT=10kW
• B-012. 3-Phase 3-level NPC-I Inverter P_OUT=10kW
• C006. DC-DC Converter, Buck Converter Vo=250V Io=20A
• C007. DC-DC Converter, Buck Converter 2-Phase Vo=250V Io=40A
• C010. DC-DC Converter, Flyback Converter V_IN=800V Vo=25V Io=10A
• C011. DC-DC Converter, Forward Converter V_IN=500V Vo=25V Io=10A
• C012. DC-DC Converter, LLC Buck Converter Vo=12V Io=250A
• C013. DC-DC Converter, Phase-Shift Buck Converter Vo=12V Io=250A
• C014. DC-DC Converter, Quasi-Resonant Converter V_IN=800V Vo=25 Io=10A
• ROHM Solution Simulator Power Device User's Guide for Inverter