因為Total Capacitive Charge(Qc)小、故可減少切換損失、亦可達到高速切換。 另外、Si材料FRB (Fast Recovery Diode)的trr會因溫度上升而增加、但SiC卻不受溫昇影響, 幾乎可維持在一定的特性。
SiC Schottky Barrier Diodes have many useful applications, from rectification, signal conditioning and switching to TTL and CMOS logic gate,s mainly due to their low power and fast switching speeds.
Please contact us for specifications and purchase information. We do not sell bare die SiC Schottky Barrier Diode products through internet distributors.
ROHMs Bare Die MOSFETs are used in advanced power electronics circuits to achieve significantly higher levels of energy efficiency than is possible with conventional silicon devices.
Please contact us for specifications and purchase information. We do not sell bare die SiC MOSFET products through internet distributors.