製品特設CSS

製品特設CSS

power-device-support碳化矽SiC支援網頁

碳化矽SiC支援網頁

評估板可輕鬆評估ROHM的 SiC蕭特基二極體, SiC MOSFET, SiC電源模組 (結合了SiC SBD和MOSFET)以及高耐熱功率模組等系列產品。
這些小型、高效的半導體元件能夠顯著縮小最終產品的尺寸,搭配評估板使用還可以幫助客戶進行應用的試作和初期開發。

評估機板陣容

Category SiC Product  Image Part No. Maker Product Details  User Guide Purchase Board
SiC-MOS  Evaluation
Board
SCT4XXX series Trench(4th Generation) TO-247-N NEW
P04SCT4018KE-EVK-001
ROHM Details User Guide
Product Specification
Online Distributors
SCT4XXX series Trench(4th Generation) TO-247-4L NEW
P05SCT4018KR-EVK-001
Online Distributors
SCT3XXX series Trench(3G) TO-247 3L/4L P02SCT3040KR-EVK-001  Details User Guide
Product Specification
Online Distributors
SiC Module Drive board  BSM series Planar (2G)(1200V, E / G type)  BSMGD2G12D24-EVK001  - User Guide Inquire
BSM series Trench(3G/4G) (1200V,E/G type) BSMGD3G12D24-EVK001 - User Guide Inquire
BSM series (1200V,C type) BSMGD3C12D24-EVK001 - User Guide Inquire
BSM series (1700V,E type) BSMGD2G17D24-EVK001   User Guide Inquire
BSM series (1200V,1700V E/G type) 2EG-B series TAMURA  Tamura Manufacturing’s Website
Snubber Module  BSM series (1200V, C type)  MGSM1D72J2-145MH26  ROHM - Inquire
BSM series (1200V,  E / G type)  MGSM1D72J2-145MH16  -
BSM250 (1700V,  E type)  MGSM1D72J3-934MH93 -
AC/DC  Evaluation Board SCT2H12NZ BD7682FJ-LB-EVK-402 ROHM Details Application Note Online Distributors

評估機板詳情

P02SCT3040KR-EVK-001

  • 羅姆SCT3040KR(1200V 40mΩ TO-247-4L)評估用
  • 透過改變電路常數,可用來評估羅姆其他SiC-MOSFET
  • 除TO-247-4L外,還有TO-247-3L的通孔,可在同一評估板上進行對比評估
  • 單一電源(+12V工作)
  • 可進行最大150A的雙脈衝測試,最大開關工作頻率500kHz
  • 對應各種電源拓撲(Buck, Boost, Half-Bridge)
  • 內置閘極驅動用隔離電源,可透過可變電阻調整(+12V~+23V)
  • 可透過Jumper端子來切換閘極驅動用負偏壓和零偏壓
  • 可防止上下臂同時導通,內置過電流保護功能(DESAT, OCP)

 

P02SCT3040KR-EVK-001

1700V 碳化矽SiC-MOSFET + AC/DC轉換器評估機板

配備最適合使用在大功率工具機上的 1700V高耐壓 碳化矽SiC-MOSFET,以及碳化矽SiC驅動用AC/DC轉換IC。

BD7682FJ-LB-EVK-402

  • 碳化矽SiC-MOSFET驅動、ACDC評估機板(返馳式轉換器)
  • 配備1700V 碳化矽SiC-MOSFET SCT2H12NZ
  • 配備AC/DC轉換器控制IC BD7682FJ-LB
  • 三相AC400~690V輸入 24V/1A輸出

 

BD7682FJ-LB-EVK-402

Application Note

Basics and Design Guidelines for Gate Drive Circuits
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Two-Resistor Model for Thermal Simulation
Two-Resistor Model for Thermal Simulation
Method for Monitoring Switching Waveform
Method for Monitoring Switching Waveform
How to Use Thermal Models
How to Use Thermal Models
What is a Thermal Model?
What is a Thermal Model?
Precautions During Gate-Source Voltage Measurement
Precautions During Gate-Source Voltage Measurement
Improving Switching Loss by Driver Source
Improving Switching Loss by Driver Source
Snubber Circuit Design Methods for SiC MOSFETs
Snubber Circuit Design Methods for SiC MOSFETs
Gate-Source Voltage Surge Suppression Methods
Gate-Source Voltage Surge Suppression Methods
Gate-Source Voltage Behavior in a Bridge Configuration
Gate-Source Voltage Behavior in a Bridge Configuration

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