SCT4062KR
1200V, 62mΩ, 4引腳THD, 溝槽結構, SiC MOSFET
SCT4062KR
1200V, 62mΩ, 4引腳THD, 溝槽結構, SiC MOSFET
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Description
SCT4062KR是一款有助於應用產品實現小型化和更低功耗的SiC MOSFET。該產品採用帶有驅動器源極引腳的封裝形式，可更大程度地激發出SiC MOSFET的高速開關性能。
ROHM的第4代SiC MOSFET
SCT4系列是改善了短路耐受時間並實現了業界超低導通電阻的第4代產品。與以往產品相比，該系列產品的導通電阻降低了約40%，開關損耗降低了約50%。另外，還支持更容易處理的15V柵-源電壓，使應用產品的設計更容易。
Product Detail
Specifications
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
62
Generation
4th Gen (Trench)
Drain Current[A]
26
Total Power Dissipation[W]
115
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
23.45x16.0 (t=5.2)
Features
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
Reference Design / Evaluation Tool
-
- Evaluation Board - P05SCT4018KR-EVK-001
- This board is designed with the optimum gate drive circuit for "SCT4018KR", surely TO-247-4L can also be evaluated
- Single power supply(+12V operation)
- Supports double pulse testing up to 150A and switching up to 500kHz
- Supports various power supply topologies(Buck, Boost, Half-Bridge)
- Built-in adjustable gate drive isolated power supply(positive and negative)(+12V to +25V, -4.5V to -2V)
- Active mirror clamp circuit(driver IC built-in type)
- Gate surge clamp circuit
