SCT4026DR (新產品)
750V, 26mΩ, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

SCT4026DR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-speed switching performance that is a feature of SiC MOSFETs.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Data Sheet 購買 *
* 本產品是標準級的產品。
本產品不建議使用的車載設備。

Product Detail

 
料號 | SCT4026DRC15
狀態 | 推薦品
封裝 | TO-247-4L
單位數量 | 450
最小包裝數量 | 30
包裝形式 | Taping
RoHS | Yes

規格:

Drain-source Voltage[V]

750

Drain-source On-state Resistance(Typ.)[mΩ]

26

Generation

4th Gen (Trench)

Drain Current[A]

56

Total Power Dissipation[W]

176

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x23.45 (t=5.2)

Find Similar

功能:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

Evaluation
Board

 
    • Evaluation Board
    • P05SCT4018KR-EVK-001
      • This board is designed with the optimum gate drive circuit for "SCT4018KR", surely TO-247-4L can also be evaluated
      • Single power supply(+12V operation)
      • Supports double pulse testing up to 150A and switching up to 500kHz
      • Supports various power supply topologies(Buck, Boost, Half-Bridge)
      • Built-in adjustable gate drive isolated power supply(positive and negative)(+12V to +25V, -4.5V to -2V)
      • Active mirror clamp circuit(driver IC built-in type)
      • Gate surge clamp circuit

  • User's Guide Buy