SCT4026DRHR
750V, 56A, 4引腳THD, 溝槽結構 車載SiC-MOSFET
SCT4026DRHR
SCT4026DRHR
750V, 56A, 4引腳THD, 溝槽結構 車載SiC-MOSFET
SCT4026DRHR是一款750V、56A的Nch SiC功率MOSFET。該產品採用溝槽結構實現了更低的導通電阻，是符合AEC-Q101標準的高可靠性車規級產品。
ROHM的第4代SiC MOSFET
SCT4系列是改善了短路耐受時間並實現了業界超低導通電阻的第4代產品。與以往產品相比，該系列產品的導通電阻降低了約40%，開關損耗降低了約50%。另外，該產品還支持更容易處理的15V柵-源電壓，使應用產品的設計更容易。
Product Detail
規格:
Drain-source Voltage[V]
750
Drain-source On-state Resistance(Typ.)[mΩ]
26
Generation
4th Gen (Trench)
Drain Current[A]
56
Total Power Dissipation[W]
176
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x23.45 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
功能:
- Qualified to AEC-Q101
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
