ROHM Product Detail

SCT4013DR
750V, 13mΩ, 4引腳THD, 溝槽結構, SiC MOSFET

SCT4013DR是一款有助於應用產品實現小型化和更低功耗的SiC MOSFET。該產品採用帶有驅動器源極引腳的封裝形式，可更大程度地激發出SiC MOSFET的高速開關性能。

Data Sheet 購買 *

* 本產品是標準級的產品。
本產品不建議使用的車載設備。
Data Sheet 購買 *

Product Detail

 
料號 | SCT4013DRC15
狀態 | 推薦品
封裝 | TO-247-4L
包裝形式 | Tube
單位數量 | 450
最小包裝數量 | 30
RoHS | Yes
長期供貨計畫 | 9 Years

規格:

Drain-source Voltage[V]

750

Drain-source On-state Resistance(Typ.)[mΩ]

13

Generation

4th Gen (Trench)

Drain Current[A]

105

Total Power Dissipation[W]

312

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

23.45x16.0 (t=5.2)

Find Similar

功能:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

參考設計 / 應用評估套件

 
    • Evaluation Board - P05SCT4018KR-EVK-001

      • This board is designed with the optimum gate drive circuit for "SCT4018KR", surely TO-247-4L can also be evaluated
      • Single power supply(+12V operation)
      • Supports double pulse testing up to 150A and switching up to 500kHz
      • Supports various power supply topologies(Buck, Boost, Half-Bridge)
      • Built-in adjustable gate drive isolated power supply(positive and negative)(+12V to +25V, -4.5V to -2V)
      • Active mirror clamp circuit(driver IC built-in type)
      • Gate surge clamp circuit

    • User's Guide
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