SCT4013DR
750V, 13mΩ, 4引腳THD, 溝槽結構, SiC MOSFET
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Description
SCT4013DR是一款有助於應用產品實現小型化和更低功耗的SiC MOSFET。該產品採用帶有驅動器源極引腳的封裝形式，可更大程度地激發出SiC MOSFET的高速開關性能。
ROHM的第4代SiC MOSFET
SCT4系列是改善了短路耐受時間並實現了業界超低導通電阻的第4代產品。與以往產品相比，該系列產品的導通電阻降低了約40%，開關損耗降低了約50%。另外，還支持更容易處理的15V柵-源電壓，使應用產品的設計更容易。
Product Detail
Specifications Data Sheet
Drain-source Voltage[V]
750
Drain-source On-state Resistance(Typ.)[mΩ]
13
Generation
4th Gen (Trench)
Drain Current[A]
105
Total Power Dissipation[W]
312
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
23.45x16.0 (t=5.2)
Features
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
Reference Design / Evaluation Tool
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- Evaluation Board - P05SCT4018KR-EVK-001
- This board is designed with the optimum gate drive circuit for "SCT4018KR", surely TO-247-4L can also be evaluated
- Single power supply(+12V operation)
- Supports double pulse testing up to 150A and switching up to 500kHz
- Supports various power supply topologies(Buck, Boost, Half-Bridge)
- Built-in adjustable gate drive isolated power supply(positive and negative)(+12V to +25V, -4.5V to -2V)
- Active mirror clamp circuit(driver IC built-in type)
- Gate surge clamp circuit
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- Reference Design - REF68020
- 2.5kW LLC Converter, DC390Vin, 48Vout
LLC converters are power conversion circuits that utilize resonance phenomena, consisting of a primary-side excitation inductance, resonant inductor, resonant capacitor, switching element, and secondary-side rectifier circuit. By employing soft-switching technologies such as ZVS (Zero Voltage Switching) (primary-side switch) and ZCS (Zero Current Switching) (secondary-side switch), switching losses are significantly reduced, achieving high efficiency and low EMI by suppressing switching noise. They are applicable to a variety of power conversion circuits.
LLC converters that accept DC 400V input are used in applications where the DC voltage is converted from a commercial AC power input via a PFC (Power Factor Correction) and then converted to the voltage required by the system for distribution (server power supplies, industrial power supplies, PV hybrid inverters, ESS, UPS, xEV OBC (onboard charger), etc.), as well as for voltage conversion from the 400V battery of xEVs (xEV DC-DC converters, etc.). The secondary-side full-bridge rectifier circuit is a topology commonly used for relatively high power (up to several tens of kW) and relatively high output voltage (>48V).
This reference design is a DC 390V input, 48V output, 2.5kW LLC converter that incorporates Nuvoton Technology's high-resolution 32-bit MCU (KM1M7CF0) for power control and uses SiC MOSFETs as the primary switching element.
For more details about the board, please contact the following:
https://www.nuvoton.com/applications/power-energy/llc-reference-board/
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- Reference Design - REF68007
- TO247 SiC MOSFET 3-Phase Inverter Evaluation Board
The SCT4013DRC15-EVK-A08 provides detailed specifications for a three-phase inverter featuring Silicon Carbide (SiC) MOSFETs. The SCT4013DRC15-EVK-A08 serves as a reference design platform for evaluating a three-phase inverter system based on ROHM’s 4th generation SiC MOSFETs in a TO‑247 package. This evaluation kit includes a power board, gate driver board, and sensing board, offering a complete solution for high-efficiency power conversion applications up to 10 kVA. The reference design is supported by comprehensive development resources, including schematics, bill of materials (BOM), and PCB layout files. It features a reference board optimized with TO‑247 SiC MOSFETs, designed for high-performance three-phase inverter applications. We encourage users to explore the advanced control capabilities of this EVK and consider its integration into future power electronics development projects.
