SCT4026DE
750V, 26mΩ, 3引腳THD, 溝槽結構, SiC MOSFET

SCT4026DE是一款有助於應用產品實現小型化和更低功耗的SiC MOSFET。

ROHM的第4代SiC MOSFET
SCT4系列是改善了短路耐受時間並實現了業界超低導通電阻的第4代產品。與以往產品相比,該系列產品的導通電阻降低了約40%,開關損耗降低了約50%。另外,該產品還支持更容易處理的15V柵-源電壓,使應用產品的設計更容易。

Data Sheet 購買 *
* 本產品是標準級的產品。
本產品不建議使用的車載設備。

Product Detail

 
料號 | SCT4026DEC11
狀態 | 推薦品
封裝 | TO-247N
包裝形式 | Tube
單位數量 | 450
最小包裝數量 | 30
RoHS | Yes
長期供貨計畫 | 10 Years

規格:

Drain-source Voltage[V]

750

Drain-source On-state Resistance(Typ.)[mΩ]

26

Generation

4th Gen (Trench)

Drain Current[A]

56

Total Power Dissipation[W]

176

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x21 (t=5.2)

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功能:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

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Different Grade

SCT4026DEHR   Grade| Automotive Status推薦品

Reference Design / Application Evaluation Kit

 
    • Evaluation Board - P04SCT4018KE-EVK-001
      • This board is designed with the optimum gate drive circuit for "SCT4018KE", surely TO-247N can also be evaluated
      • Single power supply(+12V operation)
      • Supports double pulse testing up to 150A and switching up to 500kHz
      • Supports various power supply topologies(Buck, Boost, Half-Bridge)
      • Built-in adjustable gate drive isolated power supply(positive and negative)(+12V to +25V, -4.5V to -2V)
      • Active mirror clamp circuit(driver IC built-in type)
      • Gate surge clamp circuit

  • User's Guide
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