第4代SiC MOSFET

特點

1.改進短路耐受時間，實現業界頂級低導通電阻

在第4代SiC MOSFET中，透過進一步改進ROHM自有雙溝槽結構，成功改善了主驅逆變器所要求的短路耐受時間，使導通電阻比傳統產品降低約40%，實現了業界頂級低導通電阻。

2.透過大幅降低寄生電容，實現更低開關損耗

第4代SiC MOSFET透過大幅降低閘極-汲極間電容（Cgd），成功使開關損耗比傳統產品降低約50％。

3.支援15V閘極-源極電壓，簡化應用產品設計

在MOSFET中，需要在元件ON時向電晶體的閘極施加一定量的電壓。除了到第3代SiC MOSFET為止所支援的18V閘極-源極電壓（Vgs）外，第4代SiC MOSFET還支援更容易處理的15V閘極-源極電壓，可與IGBT一起用來設計驅動電路（閘極驅動電路）。

應用範例：主驅逆變器

有助於包括車載逆變器和各種開關電源在內，各種應用產品實現顯著的小型化和更低功耗，比如在用於車載主驅逆變器時，與使用IGBT時相比，效率可以得到顯著提升，主要體現在逆變器的高扭矩和低轉速範圍，從而可使電耗減少6%（按國際標準“WLTC燃料消耗量測試”計算）。

第4代SiC MOSFET 支援資訊

評估板

4th Generation SiC MOSFET Half Bridge Evaluation Board
P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001

P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001是一款可評估採用TO-247N/TO-247-4L封裝的第4代SiC MOSFET的評估板。對於所搭載的SiC MOSFET，可以選擇並購買所需導通阻值的元件來進行評估。該評估板中配有閘極驅動器和週邊電路，可有效減少設計和評估工時。

• User Guide
• Product Specification

Evaluation Board HB2637L-EVK-301

The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.

• User Guide

EVK Simulatrion (ROHM Solution Simulator)
・P05CT4018KR-EVK-001 Double Pulse Test
・P04SCT4018KE-EVK-001 Double Pulse Test
・HB2637L-EVK-301 Double Pulse Test

我們對評估板進行了建模作業，並在線上模擬器中為第4代SiC MOSFET準備了雙脈衝測試環境。 可以透過模擬評估工作電壓、柵極驅動電路、緩衝電路常數等引起的開關波形，並有助於減少實機評估的工時，以及用於對寄生電感的效果評估等。（需要註冊MyROHM）。

• [4th Gen SiC] D-001. P05SCT4018KR-EVK-001 Double Pulse Test
• [4th Gen SiC] D-002. P04SCT4018KE-EVK-001 Double Pulse Test
• [4th Gen SiC] D-003. HB2637L-EVK-301_SCT4036KW7 Double Pulse Test

Documents

White Paper

• 4 Steps for Successful Thermal Designing of Power Devices

Application Note

• 4th Gen SiC MOSFETs Discrete Package:Characteristics and Precautions for Circuit Design Application Note
• 5kW Inverter Circuit Using 4th Generation SiC MOSFETs
• Application Benefits of Using 4th Generation SiC MOSFETs

Design Model

Part Number	Drain-source Voltage[V]	Drain-source On-state Resistance (Typ.(mΩ)	Package	SPICE Model?	PLECS Model?	PSIM Model?	PCB Library?
SCT4045DE	750	45	TO-247N	(L1,L2,L3)
SCT4026DE		26		(L1,L2,L3)
SCT4013DE		13		(L1,L2,L3)
SCT4062KE	1200	62		(L1,L2,L3)
SCT4036KE		36		(L1,L2,L3)
SCT4018KE		18		(L1,L2,L3)
SCT4045DR	750	45	TO-247-4L	(L1,L2,L3)
SCT4026DR		26		(L1,L2,L3)
SCT4013DR		13		(L1,L2,L3)
SCT4062KR	1200	62		(L1,L2,L3)
SCT4036KR		36		(L1,L2,L3)
SCT4018KR		18		(L1,L2,L3)
SCT4045DW7	750	45	TO-263-7L	(L1,L2,L3)
SCT4026DW7		26		(L1,L2,L3)
SCT4013DW7		13		(L1,L2,L3)
SCT4062KW7	1200	62		(L1,L2,L3)
SCT4036KW7		36		(L1,L2,L3)
SCT4018KW7		18		(L1,L2,L3)

Simulations (Login Required)

• [4th Gen SiC] D-001. P05SCT4018KR-EVK-001 Double Pulse Test
• [4th Gen SiC] D-002. P04SCT4018KE-EVK-001 Double Pulse Test
• [4th Gen SiC] D-003. HB2637L-EVK-301_SCT4036KW7 Double Pulse Test

TO-247N (3pin)

• [4th Gen SiC] A-011b. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016b. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

TO-247-4L (4pin)

• [4th Gen SiC] A-011a. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016a. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

SiC MOSFET 支援資訊

評估板

Category		SiC Product	Image	Part No.	User Guide	Purchase Board
SiC-MOS	Evaluation Board	SCT4XXX series Trench(4th Generation) TO-247-N		NEW P04SCT4018KE-EVK-001	User Guide Product Specification	Online Distributors
		SCT4XXX series Trench(4th Generation) TO-247-4L		NEW P05SCT4018KR-EVK-001		Online Distributors
		SCT3XXX series Trench(3rd Generation) TO-247-4L		P02SCT3040KR-EVK-001	User Guide Product Specification	Online Distributors

Documents

White Paper

• 4 Steps for Successful Thermal Designing of Power Devices
• Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
• The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
• LEADRIVE: Design, Test And System Evaluation Of Silicon Carbide Power Modules And Motor Control Units
• Solving The Challenges Of Driving SiC MOSFETs With New Packaging Developments

Application Note

• 4th Gen SiC MOSFETs Discrete Package:Characteristics and Precautions for Circuit Design Application Note
• 5kW Inverter Circuit Using 4th Generation SiC MOSFETs
• Application Benefits of Using 4th Generation SiC MOSFETs
• 5kW High-Efficiency Fan-less Inverter
• 800V Three-Phase Output LLC DC/DC Resonant Converter
• Improvement Of Switching Loss By Driver Source
• Basics and Design Guidelines for Gate Drive Circuits

Technical Articles

Schematic Design ＆ Verification

• Oscillation countermeasures for MOSFETs in parallel
• Application Note for SiC Power Devices and Modules
• Calculating Power Loss from Measured Waveforms
• Calculation of Power Dissipation in Switching Circuit
• Method for Monitoring Switching Waveform
• Precautions during gate-source voltage measurement for SiC MOSFET
• Snubber circuit design methods for SiC MOSFET
• Gate-source voltage behaviour in a bridge configuration
• Gate-Source Voltage Surge Suppression Methods
• Importance of Probe Calibration When Measuring Power: Deskew
• Impedance Characteristics of Bypass Capacitor
• Basics and Design Guidelines for Gate Drive Circuits
• SiC MOSFET Layout Design Considerations
• Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Thermal Design

• What Is Thermal Design
• Basics of Thermal Resistance and Heat Dissipation
• Method for Calculating Junction Temperature from Transient Thermal Resistance Data
• Notes for Temperature Measurement Using Thermocouples
• Two-Resistor Model for Thermal Simulation
• Notes for Temperature Measurement Using Forward Voltage of PN Junction
• What is a Thermal Model? (SiC Power Device)
• How to Use Thermal Models
• Measurement Method and Usage of Thermal Resistance RthJC
• Precautions When Measuring the Rear of the Package with a Thermocouple

Models ＆　Tools

Simulations (Login Required)

TO-247N (3pin)

• [4th Gen SiC] A-011b. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016b. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

TO-247-4L (4pin)

• [4th Gen SiC] A-011a. Totem-pole PFC Vin=220V Vout=400V Pout=3.3kW
• [4th Gen SiC] C-016a. LLC Full-Bridge Vin=400V Vout=500V Pout=3.3kW

• [4th Gen SiC] D-001. P05SCT4018KR-EVK-001 Double Pulse Test
• [4th Gen SiC] D-002. P04SCT4018KE-EVK-001 Double Pulse Test
• [4th Gen SiC] D-003. HB2637L-EVK-301_SCT4036KW7 Double Pulse Test
• A-001. Boost PFC V_IN=200V, I_IN=2.5A BCM
• A-002. Boost PFC V_IN=200V, I_IN=2.5A CCM
• A-003. Boost PFC V_IN=200V, I_IN=2.5A CCM Synchronous FETs
• A-004. Boost PFC V_IN=200V, I_IN=2.5A DCM
• A-005. Boost PFC V_IN=200V, I_IN=2.5A DCM Synchronous FETs
• A-006. Interleaved PFC V_IN=200V, I_IN=2.5A CCM
• A-008. Interleaved PFC V_IN=200V, I_IN=2.5A DCM
• A-012. Diode-Bridgeless PFC V_IN=200V, I_IN=2.5A BCM
• B-011. 3-Phase 3-level NPC-T Inverter P_OUT=10kW
• B-012. 3-Phase 3-level NPC-I Inverter P_OUT=10kW
• C006. DC-DC Converter, Buck Converter Vo=250V Io=20A
• C007. DC-DC Converter, Buck Converter 2-Phase Vo=250V Io=40A
• C010. DC-DC Converter, Flyback Converter V_IN=800V Vo=25V Io=10A
• C011. DC-DC Converter, Forward Converter V_IN=500V Vo=25V Io=10A
• C012. DC-DC Converter, LLC Buck Converter Vo=12V Io=250A
• C013. DC-DC Converter, Phase-Shift Buck Converter Vo=12V Io=250A
• C014. DC-DC Converter, Quasi-Resonant Converter V_IN=800V Vo=25 Io=10A
• ROHM Solution Simulator Power Device User's Guide for Inverter