SCT3105KR
1200V Nch 4引腳封裝 SiC-MOSFET
SCT3105KR
1200V Nch 4引腳封裝 SiC-MOSFET
SCT3105KR是非常適用於要求高效率的伺服器用電源、太陽能逆變器及電動汽車充電站等的溝槽閘結構SiC MOSFET。採用電源源極引腳和驅動器源極引腳分離的4引腳封裝，能夠最大限度地發揮出高速開關性能，尤其是可以顯著改善導通損耗。與以往的3引腳封裝（TO-247N）相比，導通損耗和關斷損耗合計可降低約35%。
Product Detail
規格:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
105
Generation
3rd Gen (Trench)
Drain Current[A]
24
Total Power Dissipation[W]
134
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
23.45x16.0 (t=5.2)
功能:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
參考設計 / 應用評估套件
-
- Evaluation Board - P02SCT3040KR-EVK-001
- For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
Enables evaluation of other ROHM SiC MOSFETs by simply changing the circuit multiplier - In addition to the TO-247-4L package, there are through-holes for TO-247-3L that make it possible to perform comparative evaluations on the same board
- Single power supply (+12V operation)
- Supports double pulse testing up to 150A and switching up to 500kHz
- Compatible with a variety of power supply topologies (Buck/Boost/Half Bridge)
- Built-in isolated power supply for gate drive adjustable via variable resistor (+12V to +23V)
- Jumper pins enable switching between negative bias/zero bias for gate drive
- Includes overcurrent protection (DESAT, OCP) along with a function for preventing simultaneous ON of both upper and lower arms
- For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
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