1200V Nch 4引腳封裝 SiC-MOSFET

SCT3105KR是非常適用於要求高效率的伺服器用電源、太陽能逆變器及電動汽車充電站等的溝槽閘結構SiC MOSFET。採用電源源極引腳和驅動器源極引腳分離的4引腳封裝,能夠最大限度地發揮出高速開關性能,尤其是可以顯著改善導通損耗。與以往的3引腳封裝(TO-247N)相比,導通損耗和關斷損耗合計可降低約35%。

Data Sheet 購買 *
* 本產品是標準級的產品。

Product Detail

料號 | SCT3105KRC14
狀態 | 推薦品
封裝 | TO-247-4L
單位數量 | 240
最小包裝數量 | 30
包裝形式 | Tube
RoHS | Yes


Drain-source Voltage[V]


Drain-source On-state Resistance(Typ.)[mΩ]


Drain Current[A]


Total Power Dissipation[W]


Junction Temperature(Max.)[°C]


Storage Temperature (Min.)[°C]


Storage Temperature (Max.)[°C]



  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating; RoHS compliant
  • High efficiency 4pin package
  • Evaluation board 'P02SCT3040KR-EVK-001'


    • Evaluation Board
    • P02SCT3040KR-EVK-001
      • For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
        Enables evaluation of other ROHM SiC MOSFETs by simply changing the circuit multiplier
      • In addition to the TO-247-4L package, there are through-holes for TO-247-3L that make it possible to perform comparative evaluations on the same board
      • Single power supply (+12V operation)
      • Supports double pulse testing up to 150A and switching up to 500kHz
      • Compatible with a variety of power supply topologies (Buck/Boost/Half Bridge)
      • Built-in isolated power supply for gate drive adjustable via variable resistor (+12V to +23V)
      • Jumper pins enable switching between negative bias/zero bias for gate drive
      • Includes overcurrent protection (DESAT, OCP) along with a function for preventing simultaneous ON of both upper and lower arms

  • User's Guide Buy

Design Resources



White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

User's Guide

  • P02SCT3040KR-EVK-001 User's Guide
  • TO-247-4L Half-Bridge Evaluation Board Product Specification and usage guide.

Application Note

  • Improvement of switching loss by driver source

Technical Articles

Schematic Design & Verification

  • Calculating Power Loss from Measured Waveforms
  • Calculation of Power Dissipation in Switching Circuit
  • Precautions during gate-source voltage measurement for SiC MOSFET
  • Method for Monitoring Switching Waveform
  • Snubber circuit design methods for SiC MOSFET
  • Gate-Source Voltage Surge Suppression Methods
  • Application Note for SiC Power Devices and Modules
  • Gate-source voltage behaviour in a bridge configuration
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (SiC Power Device)
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple



  • SCT3105KR PLECS Model
  • SCT3105KR SPICE Model
  • SCT3105KR Thermal Model (lib)

Packaging & Quality

Package Information

  • TO-247-4L Dimensions
  • TO-247-4L Inner Structure
  • TO-247-4L Taping Information
  • Moisture Sensitivity Level
  • Anti-Whisker formation

Environmental Data

  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)