SCT3105KR
1200V Nch 4引腳封裝 SiC-MOSFET

SCT3105KR是非常適用於要求高效率的伺服器用電源、太陽能逆變器及電動汽車充電站等的溝槽閘結構SiC MOSFET。採用電源源極引腳和驅動器源極引腳分離的4引腳封裝,能夠最大限度地發揮出高速開關性能,尤其是可以顯著改善導通損耗。與以往的3引腳封裝(TO-247N)相比,導通損耗和關斷損耗合計可降低約35%。

Data Sheet 購買 *
* 本產品是標準級的產品。
本產品不建議使用的車載設備。

Product Detail

 
料號 | SCT3105KRC14
狀態 | 推薦品
封裝 | TO-247-4L
單位數量 | 240
最小包裝數量 | 30
包裝形式 | Tube
RoHS | Yes

規格:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

105.0

Drain Current[A]

24.0

Total Power Dissipation[W]

134

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x23.45 (t=5.2)

功能:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating; RoHS compliant
  • High efficiency 4pin package
  • Evaluation board 'P02SCT3040KR-EVK-001'

Evaluation
Board

 
    • Evaluation Board
    • P02SCT3040KR-EVK-001
      • For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
        Enables evaluation of other ROHM SiC MOSFETs by simply changing the circuit multiplier
      • In addition to the TO-247-4L package, there are through-holes for TO-247-3L that make it possible to perform comparative evaluations on the same board
      • Single power supply (+12V operation)
      • Supports double pulse testing up to 150A and switching up to 500kHz
      • Compatible with a variety of power supply topologies (Buck/Boost/Half Bridge)
      • Built-in isolated power supply for gate drive adjustable via variable resistor (+12V to +23V)
      • Jumper pins enable switching between negative bias/zero bias for gate drive
      • Includes overcurrent protection (DESAT, OCP) along with a function for preventing simultaneous ON of both upper and lower arms

  • User's Guide Buy

Design Resources

 

Tools

Models