S6602
1200V, 10A, Silicon-carbide (SiC) SBD Bare Die
S6602
S6602
1200V, 10A, Silicon-carbide (SiC) SBD Bare Die
S6602 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. Reducing switching loss, enabling high-speed switching operation.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
Data Sheet
* 本產品是標準級的產品。
本產品不建議使用的車載設備。
本產品不建議使用的車載設備。
Product Detail
規格:
Reverse Voltage[V]
1200
Continuous Forward Current[A]
10
Generation
3rd Gen
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
功能:
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- High surge current capability
