BSM600D12P3G001
SiC(碳化矽)功率模組
BSM600D12P3G001
SiC(碳化矽)功率模組
BSM600D12P3G001是由羅姆公司生產的SiC-UMOSFET和SiC-SBD構成的全SiC半橋模組。最適合馬達驅動、逆變器、轉換器、太陽能發電、風力發電及感應加熱裝置等用途。
Product Detail
規格:
Drain-source Voltage[V]
1200
Drain Current[A]
576
Total Power Dissipation[W]
2450
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
152x62 (t=18)
功能:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Evaluation
Board
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- Drive Board
- AgileSwitch 2ASC-12A1HP / EDCA1
For BSM series (1200V, E / G type)
Core Driver : 2ASC-12A1HP
Adapter Board : EDCA1
-
- Drive Board
- BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module
- MGSM1D72J2-145MH16
BSM series (1200V, E / G type)
-
- Drive Board
- TAMURA 2DU series
For BSM series (1200V, C / E / G type)