ROHM Product Detail

最終銷售 BSM600C12P3G201
SiC（碳化矽）功率模組

指正在申請中止製造的產品。

Data Sheet
Data Sheet

Product Detail

 
料號 | BSM600C12P3G201
狀態 | 最終銷售
封裝 | G Type
包裝形式 | Corrugated Cardboard
單位數量 | 4
最小包裝數量 | 4
RoHS | Yes

規格:

Drain-source Voltage[V]

1200

Drain Current[A]

576

Total Power Dissipation[W]

2460

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Chopper

Package Size [mm]

152.0x62.0 (t=18.0)

功能:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

參考設計 / 應用評估套件

 
    • Drive Board - BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

    • Drive Board - TAMURA 2DU series

    • Drive Board for BSM series (1200V, C / E / G type)

    •
推薦產品搜索
X

Most Viewed