最終銷售
BSM600C12P3G201
SiC（碳化矽）功率模組
BSM600C12P3G201
Product Detail
規格:
Drain-source Voltage[V]
1200
Drain Current[A]
576
Total Power Dissipation[W]
2460
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Chopper
Package Size [mm]
152x62 (t=18)
功能:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Application Evaluation Kit
-
- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
-
- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)
