BSM300D12P3E005
SiC功率模組
BSM300D12P3E005
SiC功率模組
BSM300D12P3E005是一款半橋型SiC功率模組,由羅姆製造的SiC-UMOSFET和SiC-SBD(蕭特基二極體)組成。適用於電機驅動、逆變器、轉換器應用。
Product Detail
規格:
Drain-source Voltage[V]
1200
Drain Current[A]
300
Total Power Dissipation[W]
1260
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package Size [mm]
152.0x62.0 (t=18.0)
功能:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
參考設計 / 應用評估套件
-
- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
-
- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)