ROHM Product Detail

BSM300C12P3E301
SiC功率模組

BSM300C12P3E301是一款斬波型SiC功率模組，由羅姆製造的SiC-UMOSFET和SiC-SBD（蕭特基二極體）組成。適用於逆變器應用。

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* 本產品是標準級的產品。
本產品不建議使用的車載設備。
Data Sheet 購買 *

Product Detail

 
料號 | BSM300C12P3E301
狀態 | 推薦品
封裝 | E Type
包裝形式 | Corrugated Cardboard
單位數量 | 4
最小包裝數量 | 4
RoHS | Yes

規格:

Drain-source Voltage[V]

1200

Drain Current[A]

300

Total Power Dissipation[W]

1360

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Chopper

Package Size [mm]

152.0x62.0 (t=18.0)

Find Similar

功能:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

參考設計 / 應用評估套件

 
    • Drive Board - BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

    • Drive Board - TAMURA 2DU series

    • Drive Board for BSM series (1200V, C / E / G type)

    •

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