ROHM Product Detail

BSM250D17P2E004
1700V “全SiC”功率模組

BSM250D17P2E004是由羅姆公司生產的SiC-DMOSFET和SiC-SBD構成的“全SiC”半橋模組。在高溫高濕偏壓試驗(HV-H3TRB)中實現了超過1,000小時也不發生絕緣擊穿的高可靠性。由此,在高溫高濕環境下也可放心耐受1700V高壓。最適合以室外發電系統和充放電試驗機等評估裝置為代表的工控設備用電源的逆變器、轉換器。

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* 本產品是標準級的產品。
本產品不建議使用的車載設備。

Product Detail

 
料號 | BSM250D17P2E004
狀態 | 推薦品
封裝 | E Type
包裝形式 | Corrugated Cardboard
單位數量 | 4
最小包裝數量 | 4
RoHS | Yes

規格:

Drain-source Voltage[V]

1700

Drain Current[A]

250

Total Power Dissipation[W]

1800

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half bridge

Package Size [mm]

152.0x62.0 (t=18.0)

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功能:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

參考設計 / 應用評估套件

 
    • Drive Board - BSMGD2G17D24-EVK001
    • This evaluation board, BSMGD2G17D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation 1700V SiC-MOSFET in E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

  • User's Guide
    • Snubber Module - MGSM1D72J3-934MH93
    • Snubber Module for BSM250 (1700V,E type)

    • Drive Board - TAMURA 2DUB series
    • Drive Board for BSM series (1700V, E type)

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