BSM180D12P3C007
SiC功率模組

使用ROHM公司生產SiC-UMOSFET的半橋構成SiC MOSFET模組。

Data Sheet 購買 *
* 本產品是標準級的產品。
本產品不建議使用的車載設備。
Data Sheet 購買 *

Product Detail

 
料號 | BSM180D12P3C007
狀態 | 推薦品
封裝 | C
單位數量 | 12
最小包裝數量 | 12
包裝形式 | Corrugated Cardboard
RoHS | Yes

規格:

Drain-source Voltage[V]

1200

Drain Current[A]

180.0

Total Power Dissipation[W]

880

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

122x45.6 (t=17.5)

Find Similar

功能:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Evaluation
Board

 
    • Drive Board
    • AgileSwitch 2ASC-12A1HP / EDCA2

    • BSM series (1200V, C type)
      Core Driver : 2ASC-12A1HP
      Adapter Board : EDCA2

    • Drive Board
    • BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

  • User's Guide Purchase Inquiry
    • Drive Board
    • TAMURA 2DU series

    • For BSM series (1200V, C / E / G type)

SHOW/HIDE COLUMNS
New Product List