ROHM Product Detail

BSM180D12P3C007
SiC功率模組

使用ROHM公司生產SiC-UMOSFET的半橋構成SiC MOSFET模組。

Data Sheet 購買 *
* 本產品是標準級的產品。
本產品不建議使用的車載設備。
Data Sheet 購買 *

Product Detail

 
料號 | BSM180D12P3C007
狀態 | 推薦品
封裝 | C Type
包裝形式 | Corrugated Cardboard
單位數量 | 12
最小包裝數量 | 12
RoHS | Yes

規格:

Drain-source Voltage[V]

1200

Drain Current[A]

180

Total Power Dissipation[W]

880

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half-bridge

Package Size [mm]

122.0x45.6 (t=17.5)

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功能:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

參考設計 / 應用評估套件

 
    • Drive Board - BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH26

    • Snubber Module for BSM series (1200V, C type)

    • Drive Board - TAMURA 2DU series

    • Drive Board for BSM series (1200V, C / E / G type)

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