BSM120D12P2C005
SiC Power Module

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.

Data Sheet 購買 *
* 本產品是標準級的產品。
本產品不建議使用的車載設備。
Data Sheet 購買 *

Product Detail

 
料號 | BSM120D12P2C005
狀態 | 推薦品
封裝 | C
單位數量 | 12
最小包裝數量 | 12
包裝形式 | Corrugated Cardboard
RoHS | Yes

規格:

Drain-source Voltage[V]

1200

Drain Current[A]

134

Total Power Dissipation[W]

935

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

122x45.6 (t=17.5)

Find Similar

功能:

・Full SiC power module with SiC MOSFET and SiC SBD
・High-speed switching and low switching loss
・Ensured reliability of body diode conduction

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User Guide
    • Snubber Module - MGSM1D72J2-145MH26

    • Snubber Module for BSM series (1200V, C type)

X

Most Viewed