BSM120D12P2C005 - 技術資料

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.

* 本產品是標準級的產品。本產品不建議使用的車載設備。

White Paper

Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
 
In recent years, the advancing digitization of applications is expanding the number and role of electronic circuits, resulting in a considerable amount of man-hours spent on circuit design, from component selection during application development to board design and evaluation. This document discribes the solution for solving customer issues for each design flow with ROHM's support and tools.

User's Guide

Evaluation Board User's Guide for C-type Full SiC Module (BSMGD3C12D24-EVK001)
 
This document covers only the evaluation board for C-type Full SiC Module (BSMGD3C12D24-EVK001) and its functions.

Application Note

Calculation of Power Dissipation in Switching Circuit
 
This application note describes how to calculate the power dissipation that occurs in a SiC MOSFET in a switching circuit with the SiC MOSFET during switching operations.
Notes for Temperature Measurement Using Thermocouples
 
This application note explains cautions regarding the temperature measurement. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
What is a Thermal Model? (SiC Power Device)
 
Thermal models are models for performing simulations in relation to heat among SPICE models. Simulations using the thermal models are performed to make a rough estimate during the initial stage of thermal design. This application note explains the thermal models.
Notes for Temperature Measurement Using Forward Voltage of PN Junction
 
This application note explains cautions regarding the temperature measurement Using Forward Voltage of PN Junction. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
How to Use Thermal Models
 
This application note explains that how to get and use the thermal models, and the simulation method.
Method for Monitoring Switching Waveform
 
This application note explains how to correctly monitor the switching waveforms of the power device element such as switching power supply or a motor drive circuit.
Application Note for SiC Power Devices and Modules
 
Learn more about silicon carbide and its use in ROHMs SiC Power Devices and Modules.
Measurement Method and Usage of Thermal Resistance RthJC
 
This application note describes how to measure and use the junction-to-case thermal resistance of a discrete semiconductor device.
Impedance Characteristics of Bypass Capacitor
 
This application note focuses on the impedance characteristics of capacitors, and explains cautions for selecting bypass capacitors.
Precautions When Measuring the Rear of the Package with a Thermocouple
 
This application note describes precautions when measuring the temperature on the rear of a package using a thermocouple to find the junction temperature of a semiconductor chip during actual operation.