650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3060AW7 (新產品)

SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

* 本產品是標準級的產品。本產品不建議使用的車載設備。
料號 | SCT3060AW7TL
狀態 | 推薦品
封裝 | TO-263-7L
單位數量 | 1000
最小包裝數量 | 1000
包裝形式 | Taping
RoHS | Yes

規格:

Drain-source Voltage[V]

650

Drain-source On-state Resistance(Typ.)[mΩ]

60.0

Drain Current[A]

38.0

Total Power Dissipation[W]

159

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

功能:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant