SCT2160KE
SiC MOSFET
SCT2160KE
SiC MOSFET
* 本產品是標準級的產品。 本產品不建議使用的車載設備。
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SCT2160KE
Description
基於SiC的平面型MOSFET。（SiC-SBD非一體型） 其特徵是高耐壓、低導通電阻、高速開關。
Product Detail
Specifications
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
160
Generation
2nd Gen (Planar)
Drain Current[A]
22
Total Power Dissipation[W]
165
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
Features
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
