SCT2080KE
SiC MOSFET
SCT2080KE
SCT2080KE
SiC MOSFET
基於SiC的平面型MOSFET。（SiC-SBD非一體型） 其特徵是高耐壓、低導通電阻、高速開關。
Product Detail
規格:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
80
Generation
2nd Gen (Planar)
Drain Current[A]
40
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
功能:
・High-speed switching・Low ON resistance
・Low body diode Qrr and trr
・Ensured reliability of body diode conduction
