S4101
N-channel SiC 功率MOSFET Ba​​re die

S4101是基於SiC的Trench MOSFET。其特徵是高耐壓、低導通電阻、高速開關。
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Data Sheet 購買
* 本產品是標準級的產品。
本產品不建議使用的車載設備。
Data Sheet 購買

Product Detail

 
料號 | S4101
狀態 | 可購買
封裝 |
單位數量 |
最小包裝數量 |
包裝形式 |
RoHS | Yes

規格:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mO]

40.0

Drain Current[A]

55.0

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

功能:

· Low ON resistance
· Fast switching speed
· Fast revese recovery
· Easy to parallel
· Simple to drive

Design Resources

 

Documents

White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units

Technical Articles

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculation of Power Dissipation in Switching Circuit
  • Method for Monitoring Switching Waveform
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • Method for Calculating Junction Temperature from Transient Thermal Resistance Data
  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (SiC Power Device)
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple

Tools

Models

  • S4101 SPICE Model
  • How to Create Symbols for PSpice Models