LTR100LJZPJU
大功率貼片電阻器/長邊電極型

ROHM的大功率貼片電阻器在長邊方向設電極,與通用貼片電阻器相比,產品的額定功率大大提高。另外,由於電極間的距離更短,因此接合可靠性更高。

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Product Detail

 
料號 | LTR100LJZPJU
狀態 | 推薦品
封裝 | LTR100L
單位數量 | 4000
最小包裝數量 | 4000
包裝形式 | Taping
RoHS | Yes
長期供貨計畫 | 10 Years

規格:

Automotive grade

Yes

Size[mm](inch)

3264(1225)

Rated Power[W]

4

Resistance Tolerance

J (±5%)

Resistance range[Ω]

10m

Resistance(Min.)[Ω]

0.01

Resistance(Max.)[Ω]

0.01

Temperature Coefficient[ppm/°C]

0 ~ 300

Operating Temperature[°C]

-65 to 155

Type

Wide terminal

Operating Temperature (Max.)[°C]

155

Common Standard

AEC-Q200 (Automotive Grade)

Find Similar

功能:

・額定功率大幅提升
・對於溫度週期(cycle)也能保有良好的接合特性
・提升抗突波特性

Reference Design / Application Evaluation Kit

 
    • Reference Design - REFLD002
    • Laser Driver Reference Design with GaN HEMT for High-Resolution LiDAR
    • The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series) Reference designs are available that includes EcoGAN™, a next-generation device capable of high-speed drive, along with a high-speed gate driver for GaN HEMTs that contribute to improved LiDAR sensor characteristics (distance and resolution) .


      • Enables high-speed driving of laser diodes - a key device in LiDAR applications
      • Includes next-gen EcoGaN™ devices
      • Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
      • Two circuit types: square wave and resonant

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