BV1LF080EFJ-C
車電級IPD 1ch 低側開關 帶轉換速率控制功能、診斷輸出功能
BV1LF080EFJ-C
車電級IPD 1ch 低側開關 帶轉換速率控制功能、診斷輸出功能
BV1LF080EFJ-C是車電級1ch低側開關。可透過SR引腳外接電阻調整轉換速率。內建OCP、DualTSD和有源鉗位功能。可透過診斷功能，進行TSD的診斷。
Product Detail
功能安全:
規格:
Type
Low side switches
Generation
GEN2
Qualification Grade
AEC-Q100 (Automotive Grade)
Feature
Slew Rate Control
Overcurrent Protection
Limitation
Thermal Shut Down
Self-restart
Channel Number [ch]
1
ON Resistance(Typ.)[mΩ]
80
ON Resistance(Max.)[mΩ]
180
Nominal Current(Typ.)[A]
7.5
Supply Voltage(Min.)[V]
3.5
Supply Voltage(Max.)[V]
6.5
Drain-Source Voltage (Max.)[V]
42
Single Pulse Energy 25°C [mJ]
200
Over Current Limit (Min.)[A]
7.5
Under voltage Detection Level(Max.)[V]
3
Current consumption(Typ.)[µA]
200
Junction Temperature Tj (Min.)[°C]
-40
Junction Temperature Tj (Max.)[°C]
150
Package Size [mm]
4.9x6 (t=1)
功能:
- AEC-Q100 Qualified (Grade 1)
- Built-in Dual TSD (Thermal shutdown and ΔTj Protection)
- Built-in Over Current Protection Function (OCP)
- Built-in Thermal Shutdown Function (TSD)
- Built-in Active Clamp Function
- Built-in Diagnostic Function
- Built-in Slew Rate Control Function
- Directly Controllable from CMOS logic ICs
- On-Resistance RDS (ON) = 80mΩ (Typ) (VDD = 5V, IOUT = 1.0A, Tj = 25°C)
- Monolithic Power Management IC with Control Unit (CMOS) and Power MOSFET on a Single Chip
