RU1C001ZP
1.2V驅動P通道MOSFET
RU1C001ZP
1.2V驅動P通道MOSFET
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Description
MOSFET是透過微處理技術製成的,具有超低導通電阻,適用於行動設備的低電流消耗。產品陣容廣泛,包含小型、大功率和複合類型,以滿足市場需求。
Product Detail
Specifications
Package Code
SOT-323FL
JEITA Package
SC-85
Number of terminal
3
Polarity
P
Drain-Source Voltage VDSS[V]
-20
Drain Current ID[A]
-0.1
RDS(on)[Ω] VGS=1.2V(Typ)
10
RDS(on)[Ω] VGS=1.5V(Typ)
6
RDS(on)[Ω] VGS=2.5V(Typ)
4.8
RDS(on)[Ω] VGS=4V(Typ)
3.4
RDS(on)[Ω] VGS=4.5V(Typ)
2.5
RDS(on)[Ω] VGS=Drive (Typ)
10
Power Dissipation (PD)[W]
0.15
Drive Voltage[V]
-1.2
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.1x2.0 (t=1.05)
Features
· 低電壓 (1.2V) 驅動型· P通道小訊號MOSFET
· 小型表面貼裝封裝
· 無鉛/符合RoHS標準