RJ1P10BAT (新產品)
Pch -100V -105A, TO-263AB, 功率MOSFET
RJ1P10BAT (新產品)
Pch -100V -105A, TO-263AB, 功率MOSFET
RJ1P10BAT是具有低導通電阻和高功率封裝的功率MOSFET，適用於開關和馬達驅動應用。
本產品不建議使用的車載設備。
Product Detail
規格:
Package Code
TO-263AB
Applications
Switching
Number of terminal
3
Polarity
Pch
Drain-Source Voltage VDSS[V]
-100
Drain Current ID[A]
-105
RDS(on)[Ω] VGS=6V(Typ)
0.0104
RDS(on)[Ω] VGS=10V(Typ)
0.0094
RDS(on)[Ω] VGS=Drive (Typ)
0.0104
Total gate charge Qg[nC]
255
Power Dissipation (PD)[W]
201
Drive Voltage[V]
-6
trr (Typ.)[ns]
62
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
15.1×10.11 (t=4.77)
功能:
- 低導通電阻
- 高功率封裝 (TO263AB)
- 無鉛電鍍; 符合RoHS指令
- 無鹵素
- 100% Rg 和 UIS 測試
