Models
- RQ3E150GN SPICE Model
- RQ3E150GN Thermal Model (lib)
Characteristics Data
- ESD Data
場效電晶體的MOSFET。ROHM提供微細化製程的「超低導通電阻元件」並可應用在大範圍領域的功率MOSFET。並可依用途推出符合小型・高功率・複合化的多樣產品陣容對應市場上的各種需求。
Grade
Standard
Package Code
HSMT8 (3.3x3.3)
Package Size[mm]
3.3x3.3 (t=0.8)
Applications
Power Supply
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
39.0
RDS(on)[Ω] VGS=4.5V(Typ.)
0.0062
RDS(on)[Ω] VGS=10V(Typ.)
0.0047
RDS(on)[Ω] VGS=Drive (Typ.)
0.0062
Total gate charge Qg[nC]
7.4
Power Dissipation (PD)[W]
17.0
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4512
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150