RQ3E100GN
4.5V驅動N溝道MOSFET
RQ3E100GN
4.5V驅動N溝道MOSFET
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Description
功率MOSFET採用微處理技術製成,可作為低導通電阻器件,適用於廣泛的應用。產品陣容廣泛,涵蓋緊湊型、大功率型和複雜型,可滿足市場的各種需求。
Product Detail
Specifications
Package Code
HSMT8
Applications
Power Supply
Number of terminal
8
Polarity
N
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
21
RDS(on)[Ω] VGS=4.5V(Typ)
0.012
RDS(on)[Ω] VGS=10V(Typ)
0.0089
RDS(on)[Ω] VGS=Drive (Typ)
0.012
Total gate charge Qg[nC]
3.9
Power Dissipation (PD)[W]
15
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4504
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
Features
・低導通電阻。・大功率封裝 (HSMT8)
・不含鉛,符合RoHS規範
・無鹵素