RQ3E100BN
N溝道 30V 21A 功率MOSFET
RQ3E100BN
N溝道 30V 21A 功率MOSFET
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Description
RQ3E100BN 是用於開關的高功率封裝 (HSMT8) MOSFET。
Product Detail
Specifications
Package Code
HSMT8
Applications
Switching, Motor
Number of terminal
8
Polarity
N
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
21
RDS(on)[Ω] VGS=4.5V(Typ)
0.011
RDS(on)[Ω] VGS=10V(Typ)
0.0077
RDS(on)[Ω] VGS=Drive (Typ)
0.011
Total gate charge Qg[nC]
10.5
Power Dissipation (PD)[W]
15
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4015
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
Features
- 低導通電阻。
- 高功率封裝 (HSMT8)
- 無鉛電鍍；符合RoHS指令。
- 無鹵素
