RQ3E080GN
4.5V驅動N溝道MOSFET
RQ3E080GN
4.5V驅動N溝道MOSFET
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Description
功率MOSFET採用微處理技術，製造為低導通電阻元件，適用於廣泛的應用。產品陣容涵蓋小型、大功率型和複雜型，可滿足市場的各種需求。
Product Detail
Specifications
Package Code
HSMT8
Applications
Power Supply
Number of terminal
8
Polarity
N
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
18
RDS(on)[Ω] VGS=4.5V(Typ)
0.0175
RDS(on)[Ω] VGS=10V(Typ)
0.0129
RDS(on)[Ω] VGS=Drive (Typ)
0.0175
Total gate charge Qg[nC]
2.8
Power Dissipation (PD)[W]
14
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4513
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
Features
。低導通電阻。。大功率封裝 (HSMT8)
。無鉛電鑄; 符合RoHS規範
。無卤素
