RQ1E075XN
4V Drive Nch MOSFET
RQ1E075XN
4V Drive Nch MOSFET
場效電晶體MOSFET。透過高階製程技術並針對行動裝置開發出具有低導通電阻特性的低耗電功率MOSFET。依據不同的用途,我們也提供小型、高功率和複合品等豐富的產品線,以應市場需求。
Product Detail
規格:
Package Code
TSMT8
Applications
Switching
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
7.5
RDS(on)[Ω] VGS=4V(Typ)
0.019
RDS(on)[Ω] VGS=4.5V(Typ)
0.017
RDS(on)[Ω] VGS=10V(Typ)
0.012
RDS(on)[Ω] VGS=Drive (Typ)
0.019
Total gate charge Qg[nC]
6.8
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
4
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.0x2.8 (t=0.85)