RJ1P10BBH
N溝道100V 170A, TO-263AB, 功率MOSFET
RJ1P10BBH
N溝道100V 170A, TO-263AB, 功率MOSFET
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Description
RJ1P10BBH是低導通電阻、高功率小尺寸模組封裝的功率MOSFET,適用於開關應用。
Product Detail
Specifications
Package Code
TO-263AB
Applications
Switching
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
100
Drain Current ID[A]
170
RDS(on)[Ω] VGS=6V(Typ)
0.0028
RDS(on)[Ω] VGS=10V(Typ)
0.0023
RDS(on)[Ω] VGS=Drive (Typ)
0.0028
Total gate charge Qg[nC]
89
Power Dissipation (PD)[W]
189
Drive Voltage[V]
6
trr (Typ.)[ns]
90
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
15.1×10.11 (t=4.77)
Features
- 低導通電阻
- 高功率小尺寸模組封裝 (TO263AB)
- 無鉛電鍍; 符合RoHS指令
- 100% UIS 測試