US6K4
1.8V Drive Nch+Nch MOSFET
US6K4
1.8V Drive Nch+Nch MOSFET
場效電晶體MOSFET。整合2個Nch MOSFET元件。透過高階製程技術並針對行動裝置開發出具有低導通電阻特性的低耗電功率MOSFET。依據不同的用途，我們也提供小型、高功率和複合品等豐富的產品線，以應市場需求。
Product Detail
規格:
Package Code
SOT-363T
JEITA Package
SC-113DA
Number of terminal
6
Polarity
Nch+Nch
Drain-Source Voltage VDSS[V]
20
Drain Current ID[A]
1.5
RDS(on)[Ω] VGS=1.8V(Typ)
0.22
RDS(on)[Ω] VGS=2.5V(Typ)
0.17
RDS(on)[Ω] VGS=4.5V(Typ)
0.13
RDS(on)[Ω] VGS=Drive (Typ)
0.22
Total gate charge Qg[nC]
1.8
Power Dissipation (PD)[W]
1
Drive Voltage[V]
1.8
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.1x2.0 (t=0.82)
