US5U35
4V Drive Pch+SBD MOSFET
US5U35
4V Drive Pch+SBD MOSFET
場效電晶體MOSFET。將採用高階製程技術的低導通電阻MOSFET與蕭特基二極體(SBD)做結合,豐富的產品線以回應各市場需求。
Product Detail
規格:
Package Code
SOT-353T
JEITA Package
SC-113CA
Number of terminal
5
Polarity
Pch+Schottky
Drain-Source Voltage VDSS[V]
-45
Drain Current ID[A]
-0.7
RDS(on)[Ω] VGS=4V(Typ)
1
RDS(on)[Ω] VGS=4.5V(Typ)
0.9
RDS(on)[Ω] VGS=10V(Typ)
0.6
RDS(on)[Ω] VGS=Drive (Typ)
1
Total gate charge Qg[nC]
1.7
Power Dissipation (PD)[W]
0.7
Drive Voltage[V]
-4
Reverse voltage VR (Diode) [V]
40
Forward Current IF (Diode) [A]
0.1
Forward Current Surge Peak IFSM (Diode) [A]
1
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.0x2.1 (t=0.82)