2.5V Drive Nch+SBD MOSFET - QS5U13
場效電晶體MOSFET。將採用高階製程技術的低導通電阻MOSFET與蕭特基二極體(SBD)做結合，豐富的產品線以回應各市場需求。
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規格:
Grade
Standard
Package Code
SOT-25T
Package Size[mm]
2.9x2.8 (t=1.0)
Number of terminal
5
Polarity
Nch+Schottky
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
2.0
RDS(on)[Ω] VGS=2.5V(Typ.)
0.11
RDS(on)[Ω] VGS=4V(Typ.)
0.076
RDS(on)[Ω] VGS=4.5V(Typ.)
0.071
RDS(on)[Ω] VGS=Drive (Typ.)
0.11
Total gate charge Qg[nC]
2.8
Power Dissipation (PD)[W]
0.9
Drive Voltage[V]
2.5
Reverse voltage VR (Diode) [V]
20.0
Forward Current IF (Diode) [A]
0.5
Forward Current Surge Peak IFSM (Diode) [A]
2.0
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150