ROHM Product Detail

新設計不推薦 BR25H128F-2LB(H2)
125℃運作 SPI BUS 128kbit (16k x 8bit) EEPROM

為了既有客戶所需而生產的產品。對於新設計則不予販售。

Product Detail

 
料號 | BR25H128F-2LBH2
封裝 | SOP8
包裝形式 | Taping
單位數量 | 250
最小包裝數量 | 250
RoHS | Yes

規格:

Series

BR25H-2LB

Density [bit]

128K

Bit Format [Word x Bit]

16K x 8

Vcc(Min.)[V]

2.5

Vcc(Max.)[V]

5.5

Circuit Current (Max.)[mA]

5.5

Standby Current (Max.)[μA]

10

Write Cycle (Max.)[ms]

4

Input Frequency (Max.)[Hz]

10M

Endurance (Max.)[Cycle]

106

Data Retention (Max.)[Year]

40

I/F

SPI BUS

Operating Temperature (Min.)[°C]

-40

Operating Temperature (Max.)[°C]

125

Package Size [mm]

5.0x6.2 (t=1.71)

功能:

· Long time support a product for Industrial applications.
· High speed clock action up to 10MHz (Max.)
· Wait function by HOLDB terminal.
· Part or whole of memory arrays settable as read only
memory area by program.
· 2.5V to 5.5V single power source action most
suitable
for battery use.
· Page write mode useful for initial value write at
factory shipment.
· For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)
· Self-timed programming cycle.
· Low Supply Current
At write operation (5V) : 1.2mA (Typ.)
At read operation (5V) : 1.0mA (Typ.)
At standby operation (5V) : 0.1µA (Typ.)
· Address auto increment function at read operation
· Prevention of write mistake
Write prohibition at power on.
Write prohibition by command code (WRDI).
Write prohibition by WPB pin.
Write prohibition block setting by status registers
(BP1, BP0).
Prevention of write mistake at low voltage.
· Data at shipment Memory array: FFh, status register
WPEN, BP1, BP0 : 0
· More than 100 years data retention.
· More than 1 million write cycles.
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