新設計不推薦
RGC80TSX8R
逆導通IGBT, 1800V 40A, 內建二極體, TO-247N, 場截止溝槽型IGBT
RGC80TSX8R
新設計不推薦
RGC80TSX8R
逆導通IGBT, 1800V 40A, 內建二極體, TO-247N, 場截止溝槽型IGBT
為了既有客戶所需而生產的產品。對於新設計則不予販售。
Product Detail
規格:
Series
C: Reverse Conducting
VCES [V]
1800
IC(100°C)[A]
40
VCE(sat) (Typ.) [V]
2.2
tf(Typ.) [ns]
55
Built-in Diode
FRD
BVCES (Min.)[V]
1800
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
功能:
- Low Collector - Emitter Saturation Voltage
- High Speed Switching
- Low Switching Loss & Soft Switching
- Monolithic Body Diode with Low Forward Voltage
- Pb - free Lead Plating ; RoHS Compliant
