BM3G015MUV-LB (新產品)
Nano Cap™, EcoGaN™, 650V 150mΩ 2MHz, GaN HEMT Power Stage IC
BM3G015MUV-LB (新產品)
Nano Cap™, EcoGaN™, 650V 150mΩ 2MHz, GaN HEMT Power Stage IC
該產品是保證在工業市場長期供應的產品。 BM3G015MUV-LB非常適用於要求高功率密度和高效率的各種電子系統。通過將650V增強型GaN HEMT和Si驅動器集成於ROHM自有封裝，與以往的分立解決方案相比，由PCB佈線和引線鍵合引起的寄生電感大大降低，可實現高達150V/ns的開關速度。另外，其柵極驅動強度可調節，這非常有助於降低EMI。該產品還內置各種保護功能和其他附加功能，可優化成本和PCB尺寸。該IC的設計旨在通用於現有的主要控制器，因此也可以替代SJ MOSFET等以往的分立功率開關。
Product Detail
規格:
Vin (Min.)[V]
-0.6
Vin (Max.)[V]
30
Operating Current@130 kHz(Typ) [μA]
450
Quiescent Current (Typ) [μA]
150
Switching Frequency(Max)[MHz]
2
Turn-on Delay Time(Typ)[ns]
11
Turn-off Delay Time(Typ)[ns]
15
Temperature (Min.)[°C]
-40
Temperature (Max.)[°C]
105
ON State Resistance(Typ)[mΩ]
150
Package Size [mm]
8.0x8.0 (t=1.0)
Application
Networking, Server
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Min.)[°C]
150
功能:
- Nano Cap™ Integrated Output Selectable 5V LDO
- Long Time Support Product for Industrial Applications
- Wide Operating Range for VDD Pin Voltage
- Wide Operating Range for IN Pin Voltage
- Low VDD Quiescent and Operating Current
- Low Propagation Delay
- High dv/dt Immunity
- Adjustable Gate Drive Strength
- Power Good Signal Output
- VDD UVLO Protection
- Thermal Shutdown Protection
Reference Design / Application Evaluation Kit
-
- Evaluation Board - BM3G015MUV-EVK-003
The BM3G015MUV-EVK-003 evaluation board consists of the BM3G015MUV (GaN FET (650V 150mΩ), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET.
