YQ3VWM10B (新產品)
Trench MOS Structure, 100V, 3A, PMDE, Highly Efficient SBD
YQ3VWM10B (新產品)
Trench MOS Structure, 100V, 3A, PMDE, Highly Efficient SBD
The YQ3VWM10B is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
本產品不建議使用的車載設備。
Product Detail
規格:
Configuration
Single
Package Code
PMDE
Mounting Style
Surface mount
Number of terminal
2
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
3
IFSM[A]
30
Forward Voltage VF(Max.)[V]
0.88
IF @ Forward Voltage [A]
3
Reverse Current IR(Max.)[mA]
0.01
VR @ Reverse Current[V]
100
Tj[℃]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
2.5x1.3 (t=1.0)
功能:
- High reliability
- Small power mold type
- Low VF and low IR
- Low capacitance
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