YQ30NL10SD
溝槽式MOS結構、100V、30A、LPDL、高效率SBD
YQ30NL10SD
溝槽式MOS結構、100V、30A、LPDL、高效率SBD
YQ30NL10SD是一種高效率蕭特基二極體，設計用於改善低VF和低IR之間的權衡。其低VF使其在高溫下也能穩定運行。非常適用於開關電源、續流二極體和反向極性保護應用。
Product Detail
規格:
Configuration
Single
Package Code
TO-263 (D2PAK)
Mounting Style
Surface mount
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
30
IFSM[A]
150
Forward Voltage VF(Max.)[V]
0.99
IF @ Forward Voltage [A]
30
Reverse Current IR(Max.)[mA]
0.095
VR @ Reverse Current[V]
100
Tj[℃]
150
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
15.1x10.1 (t=4.7)
功能:
- 高可靠性
- 功率模塑型
- 低VF和低IR
- 低電容
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