LLC converter (Half Bridge, Diode Rectification)
This topology can achieve ZVS (primary side switch) and ZCS operation (secondary side switch) simultaneously. It realizes low noise and high efficiency by generating a sinusoidal current waveform with the switch network and resonant circuit.
This circuit consists of a half-bridge switch circuit on the primary side and a diode bridge on the secondary side, it is used for relatively lower power (500W or less)
|750V SiC MOSFET
|SCT4xxxDx series NEW
|The latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely.
|650V SiC MOSFET
|Trench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products.
|650V Si FRD
|Lower Vf than RSV series, but ultra fast switching capability
|Improve fast switching capability than RFN series.
|600V Si FRD
|Small trr enable fast switching capability, RFUH series compatible to automotive use case.
|Galvanic Isolated gate driver
|1ch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins.