ROHM Product Detail

BSM600D12P4G103

1200V, 567A, 內建半橋溝槽MOS的全SiC功率模組
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BSM600D12P4G103

BSM600D12P4G103
1200V, 567A, 內建半橋溝槽MOS的全SiC功率模組

BSM600D12P4G103是一款由SiC-DMOSFET組成的半橋電模組。非常適用於馬達驅動、逆變器、轉換器、光伏發電、風力發電和IH設備等應用。

Data Sheet 購買 *
* 本產品是標準級的產品。
本產品不建議使用的車載設備。
Data Sheet 購買 *

Product Detail

 
料號 | BSM600D12P4G103
狀態 | 推薦品
封裝 | G Type
包裝形式 | Corrugated Cardboard
單位數量 | 4
最小包裝數量 | 4
RoHS | Yes
長期供貨計畫 | 10 Years

規格:

Drain-source Voltage[V]

1200

Drain Current[A]

567

Total Power Dissipation[W]

1780

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

152.0x62.0 (t=18.0)

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功能:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

參考設計 / 應用評估套件

 
    • Drive Board - BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User's Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

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