BSM400D12P3G002
SiC(碳化矽)功率模組
新設計不推薦
BSM400D12P3G002
SiC(碳化矽)功率模組
Quick Download
Description
為了既有客戶所需而生產的產品。對於新設計則不予販售。
Product Detail
Specifications
Drain-source Voltage[V]
1200
Drain Current[A]
358
Total Power Dissipation[W]
1570
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Half-Bridge
Package Size [mm]
152.0x62.0 (t=18.0)
Features
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Evaluation Tool
-

- Drive Board - BSMGD3G12D24-EVK001
This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-

- Snubber Module - MGSM1D72J2-145MH16
Snubber Module for BSM series (1200V, E / G type)
-

- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)