BSM400D12P3G002
SiC(碳化矽)功率模組
BSM400D12P3G002
SiC(碳化矽)功率模組
BSM400D12P3G002是由羅姆公司生產的SiC-UMOSFET和SiC-SBD構成的全SiC半橋模組。最適合馬達驅動、逆變器、轉換器、太陽能發電、風力發電及感應加熱裝置等用途。
Product Detail
規格:
Drain-source Voltage[V]
1200
Drain Current[A]
358
Total Power Dissipation[W]
1570
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
152.0x62.0 (t=18.0)
功能:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
參考設計 / 應用評估套件
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