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SiC Power Module - BSM120D12P2C005

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.

* 本產品是標準級的產品。本產品不建議使用的車載設備。
料號 | BSM120D12P2C005
狀態 | 供貨中
封裝 | C
單位數量 | 12
最小包裝數量 | 12
包裝形式 | Corrugated Cardboard
RoHS | Yes

規格:

Drain-source Voltage[V]

1200

Drain Current[A]

134.0

Total Power Dissipation[W]

935

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

功能:

・Full SiC power module with SiC MOSFET and SiC SBD
・High-speed switching and low switching loss
・Ensured reliability of body diode conduction