ROHM Product Detail

新設計不推薦

BSM120D12P2C005

SiC Power Module
Data Sheet

新設計不推薦 BSM120D12P2C005
SiC Power Module

Data Sheet
Data Sheet
料號 | BSM120D12P2C005
封裝 | C Type
包裝形式 | Corrugated Cardboard
單位數量 | 12
最小包裝數量 | 12
RoHS | Yes

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Description

為了既有客戶所需而生產的產品。對於新設計則不予販售。

Product Detail

Specifications

Specifications

Drain-source Voltage[V]

1200

Drain Current[A]

134

Total Power Dissipation[W]

935

Junction Temperature (Max.) [℃]

175

Storage Temperature (Min.) [℃]

-40

Storage Temperature (Max.) [℃]

125

Package

Half-Bridge

Package Size [mm]

122.0x45.6 (t=17.5)

Features

・Full SiC power module with SiC MOSFET and SiC SBD
・High-speed switching and low switching loss
・Ensured reliability of body diode conduction
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Reference Design / Evaluation Tool

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