SCT4045DRHR (新產品)
750V, 34A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

AEC-Q101 qualified automotive grade product. SCT4045DRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Advantages of ROHM's 4th Generation SiC MOSFET
This series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Data Sheet 購買
Data Sheet 購買

Product Detail

 
料號 | SCT4045DRHRC15
狀態 | 推薦品
封裝 | TO-247-4L
單位數量 | 450
最小包裝數量 | 30
包裝形式 | Tube
RoHS | Yes

規格:

Common Standard

AEC-Q101 (Automotive Grade)

Drain-source Voltage[V]

750

Drain-source On-state Resistance(Typ.)[mΩ]

45.0

Generation

4th Gen (Trench)

Drain Current[A]

34.0

Total Power Dissipation[W]

115

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

16x23.45 (t=5.2)

Find Similar

功能:

  • Qualified to AEC-Q101
  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant