N-channel SiC 功率MOSFET - SCT3030ALHR
溝槽閘極構造的SiC-MOSFET。平面型SiC-MOSFET相比，同一芯片尺寸的導通電阻可降低50%，這將大幅降低太陽能發電用功率調節器和工業設備用電源、工業用逆變器等所有相關設備的功率損耗。
×
規格:
Common Standard
AEC-Q101 (Automotive Grade)
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
30.0
Drain Current[A]
70.0
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
功能:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
- Qualified to AEC-Q101