N-channel SiC 功率MOSFET - SCT2H12NY
基於SiC的平面型MOSFET。其特徵是高耐壓、低導通電阻、高速開關。
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規格:
Drain-source Voltage[V]
1700
Drain-source On-state Resistance(Typ.)[mΩ]
1150.0
Drain Current[A]
4.0
Total Power Dissipation[W]
44
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
功能:
- Low on-resistance
- Fast switching speed
- Long creepage distance with no center lead
- Simple to drive
- Pb-free lead plating; RoHS compliant