SCT2H12NY
N-channel SiC 功率MOSFET

基於SiC的平面型MOSFET。其特徵是高耐壓、低導通電阻、高速開關。

Data Sheet 購買 *
* 本產品是標準級的產品。
本產品不建議使用的車載設備。
Data Sheet 購買 *

Product Detail

 
料號 | SCT2H12NYTB
狀態 | 可購買
封裝 | TO-268-2L
單位數量 | 800
最小包裝數量 | 800
包裝形式 | Taping
RoHS | Yes

規格:

Drain-source Voltage[V]

1700

Drain-source On-state Resistance(Typ.)[mΩ]

1150

Generation

2nd Gen (Planar)

Drain Current[A]

4

Total Power Dissipation[W]

44

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Package Size [mm]

15.95x18.9 (t=5.2)

Find Similar

功能:

  • Low on-resistance
  • Fast switching speed
  • Long creepage distance with no center lead
  • Simple to drive
  • Pb-free lead plating; RoHS compliant
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