BD2311NVX-LB
Single-channel Ultra-Fast Gate Driver for driving GaN Devices
BD2311NVX-LB
Single-channel Ultra-Fast Gate Driver for driving GaN Devices
This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BD2311NVX-LB is a single gate driver capable of driving GaN HEMTs at Ultra-Fast with narrow pulses, which can contribute to the long-range and high accuracy of LiDAR. It can supply 5.4A output current in a small 6-pin SON package. As a protection function, the driver includes an Undervoltage Lockout(UVLO) between VCC and GND.
Product Detail
規格:
Channel
1
Vcc1(Min.)[V]
4.5
Vcc1(Max.)[V]
5.5
I/O Delay Time(Max.)[ns]
Rise=3.4ns(typ)/Fall=3.0ns(typ)
Min. Input Pulse Width[ns]
1.25
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Package Size [mm]
2x2(t=0.6)
功能:
- Gate Driver Voltage Range 4.5V to 5.5V
- Minimum Input Pulse Width 1.25ns (220pF load)
- Typical Rise Time 0.65ns (220pF load)
- Typical Fall Time 0.70ns (220pF load)
- Built-in Undervoltage Lockout (UVLO) between VCC and GND
- Inverting and non-inverting inputs
- Small Package SSON06RX2020
Supporting Information
背景
近年來在伺服器系統等應用領域,由於IoT設備的需求日益成長,關於電源部分的功率轉換效率提升和設備小型化已經成為重要的社會課題,要求功率元件需不斷進行優化。另外不僅在自動駕駛領域,在工控設備和社會基礎建設監控等應用領域中也非常廣泛的LiDAR,也需要透過高速脈衝雷射光照射來進一步提高辨識精度。
在這類應用中,必須使用高速開關元件,因此ROHM在推出支援高速開關的GaN元件的同時,還開發出可大幅發揮GaN元件性能的超高速閘極驅動器IC。
概要
「BD2311NVX-LB」實現了奈秒(ns)級的閘極驅動速度,使GaN元件可實現高速開關。這要歸功於ROHM對GaN元件的深入研究,以及對閘極驅動器IC性能的追求。透過最小閘極輸入脈衝寬度為1.25奈秒的高速開關,助力應用產品實現小型化、節能並發揮更高的性能。
另外也透過ROHM自有驅動方式、搭載了在過去非常棘手的閘極輸入波形過衝抑制功能,可有效防止因過電壓輸入而導致的GaN元件故障;透過結合ROHM的EcoGaN™,還可以簡化配套產品的設計,有助提高應用產品可靠性。不僅如此,針對多樣化的應用需求,還可以透過調整閘極電阻,來選擇理想的GaN元件。
應用範例
・LiDAR(工控設備、基礎建設監控應用等)驅動電路
・資料中心、基地台等48V輸入降壓轉換器電路
・可攜式設備的無線供電電路
・D類音訊放大器等
Reference Design / Application Evaluation Kit
-
- Reference Design - REFLD002
- Laser Driver Reference Design with GaN HEMT for High-Resolution LiDAR
The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series) Reference designs are available that includes EcoGAN™, a next-generation device capable of high-speed drive, along with a high-speed gate driver for GaN HEMTs that contribute to improved LiDAR sensor characteristics (distance and resolution) .
- Enables high-speed driving of laser diodes - a key device in LiDAR applications
- Includes next-gen EcoGaN™ devices
- Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
- Two circuit types: square wave and resonant