RU1E002SP
4V驅動 P溝道MOSFET
RU1E002SP
4V驅動 P溝道MOSFET
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Description
MOSFET是利用超低導通電阻的微處理技術,適用於低電流消耗的行動裝置。擁有廣泛的產品陣容,包括小型、大功率和複合型,以滿足市場需求。
Product Detail
Specifications
Package Code
SOT-323FL
JEITA Package
SC-85
Number of terminal
3
Polarity
P
Drain-Source Voltage VDSS[V]
-30
Drain Current ID[A]
-0.25
RDS(on)[Ω] VGS=4V(Typ)
1.6
RDS(on)[Ω] VGS=4.5V(Typ)
1.4
RDS(on)[Ω] VGS=10V(Typ)
0.9
RDS(on)[Ω] VGS=Drive (Typ)
1.6
Power Dissipation (PD)[W]
0.2
Drive Voltage[V]
-4
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.1x2.0 (t=1.05)
Features
· 4V驅動型· P溝道小型訊號MOSFET
· 小型表面貼裝封裝
· 無鉛/符合RoHS規範